IndiumV3, Main, Repository, bibRecord, 001100

Butterfly packaged high-speed and low leakage InGaAs quantum well photodiode for 2000nm wavelength systems

Identifieur interne : 001100 ( Main/Repository ); précédent : 001099; suivant : 001101

Butterfly packaged high-speed and low leakage InGaAs quantum well photodiode for 2000nm wavelength systems

Auteurs : RBID : Pascal:13-0124792

Descripteurs français

Pascal (Inist)
- Optoélectronique, Cristal photonique, Courant fuite, Arséniure de gallium, Arséniure d'indium, Puits quantique, Photodiode, Longueur onde, Puits quantique contraint, Réseau fibre optique, Encapsulation, Largeur bande, Semiconducteur III-V, Communication fibre optique, Fibre multimode.

English descriptors

KwdEn :
- Bandwidth, Encapsulation, Gallium arsenides, III-V semiconductors, Indium arsenides, Leakage current, Multimode fiber, Optical fiber communication, Optical fiber network, Optoelectronics, Photodiode, Photonic crystal, Quantum well, Strained quantum well, Wavelength.

Abstract

An edge-coupled high-speed photodiode based on strained InGaAs quantum wells for detection at 2000nm is demonstrated. The fabricated device shows a leakage current as low as 120nA at -3V bias voltage and a responsivity of around 0.3A/W at 2000nm. The high-speed butterfly packaging of the device is presented which shows a 3dB bandwidth of more than 10GHz. The device shows similar high-speed performance at 1550nm.

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Pascal:13-0124792

Le document en format XML

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<term>Encapsulation</term>
<term>Gallium arsenides</term>
<term>III-V semiconductors</term>
<term>Indium arsenides</term>
<term>Leakage current</term>
<term>Multimode fiber</term>
<term>Optical fiber communication</term>
<term>Optical fiber network</term>
<term>Optoelectronics</term>
<term>Photodiode</term>
<term>Photonic crystal</term>
<term>Quantum well</term>
<term>Strained quantum well</term>
<term>Wavelength</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Optoélectronique</term>
<term>Cristal photonique</term>
<term>Courant fuite</term>
<term>Arséniure de gallium</term>
<term>Arséniure d'indium</term>
<term>Puits quantique</term>
<term>Photodiode</term>
<term>Longueur onde</term>
<term>Puits quantique contraint</term>
<term>Réseau fibre optique</term>
<term>Encapsulation</term>
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<front><div type="abstract" xml:lang="en">An edge-coupled high-speed photodiode based on strained InGaAs quantum wells for detection at 2000nm is demonstrated. The fabricated device shows a leakage current as low as 120nA at -3V bias voltage and a responsivity of around 0.3A/W at 2000nm. The high-speed butterfly packaging of the device is presented which shows a 3dB bandwidth of more than 10GHz. The device shows similar high-speed performance at 1550nm.</div>
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<s5>96</s5>
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<s4>CD</s4>
<s5>98</s5>
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<s4>CD</s4>
<s5>98</s5>
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<fC03 i1="15" i2="X" l="SPA"><s0>Fibra multimodo</s0>
<s4>CD</s4>
<s5>98</s5>
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   |texte=   Butterfly packaged high-speed and low leakage InGaAs quantum well photodiode for 2000nm wavelength systems
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Butterfly packaged high-speed and low leakage InGaAs quantum well photodiode for 2000nm wavelength systems

Butterfly packaged high-speed and low leakage InGaAs quantum well photodiode for 2000nm wavelength systems

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